THAT300 Datasheet, PDF (3/5 Pages) List of Unclassifed Manufacturers – Low-Noise Matched Transistor Array ICs

600041 Rev B
SPECIFICATIONS¹ (Cont’d)
Page 3
THAT 340
1
14
2
13
Q1 Q2
3
12
4 SUB
SUB 11
5
10
6
9
Q3 Q4
7
8
Q1
Q1
Q1
E
B
C
Q3
C
Q3
B
Q3
E
GKH YK
Q5
E
Q1
PNP
Q3
NPN
Q5
NPN
Q5
B
Q5
C
Q7
PNP
Q7
Q7
Q7
E
B
C
Q2
Q2
Q2
C
B
E
Q2
PNP
Q4
C
Q4
B
Q4
Q4
NPN
E
THAT
312
Q6
Q6
NPN
E
Q8
PNP
17C1
18B
Q6
B
Q6
C
Q8
Q8
Q8
C
B
E
Fig 3. 340 Pinout
Fig 4. 380 Die layout
NPN Electrical Characteristics²
Parameter
Symbol
Conditions
Min
NPN Current Gain
NPN Current Gain Matching
NPN Noise Voltage Density
h_fe
V_CB = 10 V
I_C = 1 mA
60
I_C = 10 mA
Dh_fe
V_CB = 10 V, I_C = 1 mA
—
e_N V_CB = 10 V, I_C = 1 mA, 1 kHz
—
NPN Gain-Bandwidth Product
f_T
I_C = 1 mA, V_CB = 10 V
NPN DV_BE (THAT300: V_BE1-V_{BE2 ;}V_BE3-V_BE4) (THAT340: V_BE1-V_BE2)
V_OS
I_C = 1 mA
—
I_C = 10 mA
—
NPN DI_B (THAT300: I_B1-I_B2, I_B3-I_B4) (THAT340: I_B1-V_B2)
I_OS
I_C = 1 mA
—
I_C = 10 mA
—
NPN Collector-Base Leakage Current I_CBO
V_CB = 25 V
—
NPN Bulk Resistance
r_BE V_CB = 0 V, 10 mA < I_C < 10 mA
—
NPN Base Spreading Resistance r_bb
V_CB = 10 V, I_C = 1 mA
—
NPN Collector Saturation Voltage V_CE(SAT)
I_C = 1 mA, I_B = 100mA
—
NPN Output Capacitance
C_OB V_CB = 10 V, I_E = 0 mA, 100 kHz
NPN Collector-CollectorCapacitance (THAT300: Q1-Q2, Q3-Q4) (THAT340: Q1-Q2)
C_CC
V_CC = 0 V, 100 kHz
Typ
100
100
5
0.8
350
±0.5
±0.5
±500
±5
25
2
30
0.05
3
0.7
Max
—
—
—
—
±3
±1500
—
—
—
1. All specifications subject to change without notice.
2. Unless otherwise noted, T_A=25°C.
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: [phone]; Fax: [phone]; Web: www.thatcorp.com
Units
%
nV Hz
MHz
mV
mV
nA
nA
pA
W
W
V
pF
pF