STC62WV5128 Datasheet, PDF (3/10 Pages) List of Unclassifed Manufacturers – Very Low Power/Voltage CMOS SRAM

STC
STC62WV5128
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85^oC )
PARAMETER
NAME
VIL
VIH
IIL
PARAMETER
Guaranteed Input Low
Voltage⁽³⁾
Guaranteed Input High
Voltage⁽³⁾
Input Leakage Current
TEST CONDITIONS
Vcc = Max, VIN = 0V to Vcc
Vcc = 3.0 V
Vcc = 5.0 V
Vcc = 3.0 V
Vcc = 5.0 V
MIN. TYP. ⁽¹⁾ MAX.
-0.5
--
0.8
0.8
2.0
2.2
--
Vcc+0.3
--
--
1
UNITS
V
V
uA
ILO
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
--
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc = 3.0 V
Vcc = 5.0 V
--
--
VOH
Output High Voltage
Vcc = Min, I^OH = -1.0mA
Vcc = 3.0 V 2.4
--
Vcc = 5.0 V
2.4
(5)
ICC
Operating Power Supply ^{CE = VIL, IDQ = 0mA,}
70ns
Vcc = 3.0 V
--
--
Current
F=Fmax ⁽²⁾
70ns
Vcc = 5.0 V
1
uA
0.4
0.4
V
--
V
25
mA
60
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc = 3.0 V
--
--
Vcc = 5.0 V
0.5
mA
1.0
(4)
ICCSB1
Standby Current-CMOS ^{CE ≧ Vcc-0.2V,}
Vcc = 3.0 V
0.45
10
--
uA
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V _{Vcc = 5.0 V}
2.0
60
1. Typical characteristics are at TA = 25^oC.
2. Fmax = 1/t_RC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccSB1_MAX. is 5uA/30uA at Vcc=3.0V/5.0V and TA=70^oC. 5. Icc_MAX. is 30mA(@3.0V)/70mA(@5.0V) under 55ns operation.
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85^oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. ⁽¹⁾ MAX.
UNITS
CE ≧ Vcc - 0.2V
VDR
Vcc for Data Retention
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
CE ≧ Vcc - 0.2V
ICCDR
Data Retention Current
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.3
1.3
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
1. Vcc = 1.5V, T_A = + 25^OC
2. t_RC = Read Cycle Time
3. IccDR_MAX. is 0.8uA at TA=70^OC.
„ LOW V_CC DATA RETENTION WAVEFORM ( CE Controlled )
0
--
--
ns
TRC ⁽²⁾
--
--
ns
Vcc
CE
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE ≥ Vcc - 0.2V
Vcc
tR
VIH
R0201-STC62WV5128
3
Revision 1.1
Jan. 2004