STC62WV256 Datasheet, PDF (3/10 Pages) List of Unclassifed Manufacturers – VERY LOW POWER/VOLTAGE CMOS SRAM

STC
STC62WV256
„ DC ELECTRICAL CHARACTERISTICS ( TA =0^oC to + 70^oC)
PARAMETER
NAME
VIL
VIH
IIL
ILO
VOL
VOH
ICC
ICCSB
ICCSB1
PARAMETER
TEST CONDITIONS
Guaranteed Input Low
Voltage⁽²⁾
Guaranteed Input High
Voltage⁽²⁾
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Vcc = Max, VIN = 0V to Vcc
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
Vcc = Max, IOL = 2mA
Vcc = Min, IOH = -1mA
CE = VIL, IDQ = 0mA, F = Fmax⁽³⁾
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc=3.0V
Vcc=5.0V
Standby Current-CMOS
CE ≧ Vcc-0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
Vcc=3.0V
Vcc=5.0V
MIN. TYP. ⁽¹⁾ MAX.
-0.5
--
0.8
2.0
2.2
--
Vcc+0.2
--
--
1
--
--
1
--
--
0.4
2.4
--
--
--
--
20
--
--
35
--
--
1
--
--
2
--
0.01
0.2
--
0.4
1.0
1. Typical characteristics are at TA = 25^oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t_RC .
„ DATA RETENTION CHARACTERISTICS ( TA = 0^oC to + 70^oC )
UNITS
V
V
uA
uA
V
V
mA
mA
uA
SYMBOL
PARAMETER
V_DR
Vcc for Data Retention
I_CCDR
t_CDR
t_R
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
TEST CONDITIONS
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
CE ≧ Vcc -0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
See Retention Waveform
MIN. TYP. ⁽¹⁾ MAX.
1.5
--
--
--
0
T_RC ⁽²⁾
0.01
--
--
0.20
--
--
UNITS
V
uA
ns
ns
1. Vcc = 1.5V, T_A = + 25^OC
2. t_RC = Read Cycle Time
„ LOW V_CC DATA RETENTION WAVEFORM ( CE Controlled )
Vcc
CE
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE ≥ Vcc - 0.2V
Vcc
tR
VIH
R0201-STC62WV256
3
Revision 2.3
Jan. 2004