OM6017SA Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE

ELECTRICAL CHARACTERISTICS: (T_C = 25°C unless otherwise noted)
STATIC P/N OM6019SA
Parameter
Min. Typ. Max. Units Test Conditions
BV_DSS
V_GS(th)
I_GSSF
I_GSSR
I_DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I_D(on)
V_DS(on)
On-State Drain Current¹
Static Drain-Source On-State
Voltage¹
400
V ^{VGS = 0,}
I_D = 250 mA
2.0
4.0 V V_DS = V_GS, I_D = 250 mA
100 nA V_GS = +20 V
- 100 nA V_GS = - 20 V
0.1 0.25 mA V_DS = Max. Rat., V_GS = 0
0.2 1.0 mA ^{VDS = 0.8 Max. Rat., VGS = 0,}
T_C = 125° C
15
A V_DS 2 V_DS(on), V_GS = 10 V
2.0 2.64 V V_GS = 10 V, I_D = 8.0 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.25 .33
V_GS = 10 V, I_D = 8.0 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.50 0.66
V_GS = 10 V, I_D = 8.0 A,
T_C = 125 C
DYNAMIC
g_fs
Forward Transductance¹
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(on) Turn-On Delay Time
t_r
Rise Time
t_d(off) Turn-Off Delay Time
t_f
Fall Time
6.0
2900
450
150
30
40
80
30
S(W )
pF
pF
pF
V_DS 2 V_DS(on), I_D = 8.0 A
V_GS = 0
V_DS = 25 V
f = 1 MHz
ns V_DD = 200 V, I_D @ 8.0 A
ns R_g =5.0 W , V_GS =10V
ns ^{(MOSFET switching times are}
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I_S
Continuous Source Current
(Body Diode)
I_SM
Source Current¹
(Body Diode)
Modified MOSPOWER
D
- 15 A
symbol showing
G
the integral P-N
- 60 A
Junction rectifier.
S
V_SD Diode Forward Voltage¹
t_rr
Reverse Recovery Time
- 1.6 V T_C = 25 C, I_S = -15 A, V_GS = 0
600
ns ^{TJ = 100 C, IF = IS,}
dl_F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (T_C = 25°C unless otherwise noted)
STATIC P/N OM6020SA
Parameter
Min. Typ. Max. Units Test Conditions
BV_DSS
V_GS(th)
I_GSSF
I_GSSR
I_DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I_D(on)
V_DS(on)
On-State Drain Current¹
Static Drain-Source On-State
Voltage¹
500
V ^{VGS = 0,}
I_D = 250 mA
2.0
4.0 V V_DS = V_GS, I_D = 250 mA
100 nA V_GS = +20 V
- 100 nA V_GS = - 20 V
0.1 0.25 mA V_DS = Max. Rat., V_GS = 0
0.2 1.0 mA ^{VDS = 0.8 Max. Rat., VGS = 0,}
T_C = 125° C
13
A V_DS 2 V_DS(on), V_GS = 10 V
2.1 2.94 V V_GS = 10 V, I_D = 7.0 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.3 0.42
V_GS = 10 V, I_D = 7.0 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.66 0.88
V_GS = 10 V, I_D = 7.0 A,
T_C = 125 C
DYNAMIC
g_fs
Forward Transductance¹
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(on) Turn-On Delay Time
t_r
Rise Time
t_d(off) Turn-Off Delay Time
t_f
Fall Time
6.0
2600
280
40
30
46
75
31
S(W )
pF
pF
pF
V_DS 2 V_DS(on), I_D = 7.0 A
V_GS = 0
V_DS = 25 V
f = 1 MHz
ns V_DD = 210 V, I_D @ 7.0 A
ns R_g = 5.0 W , V_GS = 10 V
ns ^{(MOSFET switching times are}
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I_S
Continuous Source Current
(Body Diode)
I_SM
Source Current¹
(Body Diode)
Modified MOSPOWER
D
- 13 A
symbol showing
G
the integral P-N
- 52 A
Junction rectifier.
S
V_SD Diode Forward Voltage¹
t_rr
Reverse Recovery Time
- 1.4 V T_C = 25 C, I_S = -13 A, V_GS = 0
700
ns ^{TJ = 150 C, IF = IS,}
dl_F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.