ITR8102 Datasheet, PDF (3/8 Pages) List of Unclassifed Manufacturers – gallium arsenide infrared emitting diode

EVERLIGHT ELECTRONICS CO., LTD.
MODEL NO: ITR8102
Device Number: DRX−081−004 REV: 1.2
Ecn:
Page:3of8
▀ Absolute Maximum Ratings (Ta=25ºC)
Parameter
Power Dissipation at(or below)
25ºC Free Air Temperature
Input Reverse Voltage
Forward Current
Peak Forward Current
Pulse width ≦100µs, Duty cycle=1%
Symbol
Pd
V_R
I_F
I_FP
Ratings
75
5
50
1
Unit
mW
V
mA
A
Collector Power Dissipation
Output Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature
Storage Temperature
Lead Soldering Temperature
(1/16 inch from body for 5 seconds)
P_C
I_C
V_CEO
V_ECO
Topr
Tstg
Tsol
75
mW
20
mA
30
V
5
V
-25~+85
ºC
-40~+85
ºC
260
ºC
▀ Electro-Optical Characteristics (Ta=25ºC)
Parameter
Symbol Min. Typ. Max. Unit Condition
Input
Output
Forward Voltage
Reverse Current
Peak Wavelength
View Angle
Collector Dark
Current
V_F
I_R
λ_P
2 1/2
I_CEO
- 1.2 1.6 V
- - 10 _µA
- 940 - nm
- 60 - Deg
- - 100 nA
I_F=20mA
V_R=5V
I_F=20mA
I_F=20mA
V_CE=10V
C-E Saturation
Voltage
V_CE(sat) -
- 0.4 V
Transfer _{Collector Current}
Characteristic
Rise time
Fall time
I_C(ON) 0.9 4
t_r
- 20
t_f
- 20
15 mA
- _µsec
- _µsec
I_C=0.5mA
I_F=20mA
V_CE=5V
I_F=20mA
V_CE=5V
I_C=1mA
R_L=1KΩ
04/07/22 08:35 AM
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8102.doc