HMN12816D Datasheet, PDF (3/9 Pages) List of Unclassifed Manufacturers – Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

HANBit
HMN12816D
READ/WRITE FUNCTION
/OE
/WE
/CEL /CEU
VCC CURRENT DQ0-DQ7 DQ8-DQ15
H
H
X
X
L
H
L
L
L
H
L
H
L
H
H
L
X
L
L
L
X
L
L
H
X
L
H
L
X
X
H
H
I_CCO
High-Z
High-Z
Output
Output
I_CCO
Output
High-Z
High-Z
Output
Input
Input
I_CCO
Input
High-Z
High-Z
Input
I_CCS
High-Z
High-Z
CYCLE
PERFORMED
Output Disabled
Read Cycle
Write Cycle
Output Disabled
DATA RETENTION MODE
The HMN12816D provides full functional capability for V_CC greater than 4.5 volts and write protects by 4.25volts. Data is
maintained in the absence of V_CC without any additional support circuitry. The nonvolatile static RAMs constantly monitor
V_CC. Should the supply volt-age decay, the NV SRAM’s automatically write protect themselves, all inputs become "don't
care," and all out-puts become high impedance. As V_CC falls below approximately 3.0 volts, a power switching circuit
connects the lithium energy source to RAM to retain data. During power-up, when V_CC rises above approximately 3.0 volts,
the power switching circuit connects external V_CC to RAM and disconnects the lithium energy source.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
CONDITIONS
DC voltage applied on V_CC relative to V_SS
DC Voltage applied on any pin excluding V_CC
relative to V_SS
Operating temperature
Storage temperature
V_CC
V_T
T_OPR
T_STG
-0.3V to 7.0V
-0.3V to 7.0V
0 to 70°C
-40°C to 70°C
V_T≤ V_CC+0.3
Temperature under bias
T_BIAS
-10°C to 70°C
Soldering temperature
T_SOLDER
260°C
For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation
should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
3
HANBit Electronics Co.,Ltd