BDX65 Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – NPN SILICON DARLINGTONS

BDX 65, A, B, C
Symbol
Ratings
I_EBO
Emitter Cutoff Current
Test Condition(s)
Min Typ Mx Unit
VBE=5 V
BDX65
BDX65A
BDX65B
-
BDX65C
- 5.0 mA
VCBO=60 V
VCBO=60 V
TCASE=150°C
- - 0.4
BDX65
- -3
I_CBO
Collector-Base Cutoff
Current
VCBO=80 V
VCBO=80 V
TCASE=150°C
VCBO=100 V
VCBO=100 V
TCASE=150°C
-
BDX65A
-
-
BDX65B
-
- 0.4
-3
mA
- 0.4
-3
V_CE(SAT)
V_F
V_BE
F_h21e
VCBO=120 V
VCBO=120 V
TCASE=150°
Collector-Emitter saturation
Voltage (*)
IC=5.0 A, IB=20 mA
Forward Voltage (pulse
method)
IF=3 A
Base-Emitter Voltage (*)
IC=5.0 A, VCE=3V
Forward current transfer
ratio Cutoff frequency
VCE=3 V, IC=5 A
COMSET SEMICONDUCTORS
-
BDX65C
-
- 0.4
-3
BDX65
BDX65A
BDX65B
-
-2
V
BDX65C
BDX65
BDX65A
BDX65B
-
1.8
-
V
BDX65C
BDX65
BDX65A
BDX65B
-
-3
V
BDX65C
BDX65
BDX65A
BDX65B
-
60
-
kHz
BDX65C
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