AP9685M Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

70
60
T _A =25 ^o C
50
10V
6.0V
5.0V
4.5V
40
30
20
V _G =3.0V
10
0
0.0
2.0
4.0
6.0
8.0
10.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
47.50
I_D=5A
T _A =25 ℃
45.00
42.50
40.00
37.50
35.00
2
4
6
8
10
12
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T _j =150 ^o C
2
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9685M
50
T _A =150 ^o C
40
30
10V
6.0V
5.0V
4.5V
20
V _G = 3.0 V
10
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.2
2.0
I _D =5.3A
1.8 ^V G ^=10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
2
1.5
1
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature