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| 2N6388 Datasheet, PDF (3/6 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR | |||
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2N6388
Darlington Power Transistor
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Characteristic
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, IB = 0)
Collector Cut off Current
(VCE = 80V, IB = 0)
Collector Cut off Current
(VCE = 80V, VBE(off) = 1.5V)
(VCE = 80V, VBE(off) = 1.5V, TC = 125°C)
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 5.0A, VCE = 3.0V)
(IC = 10A, VCE = 3.0V)
Collector-Emitter Saturation Voltage
(IC = 5.0A, IB = 10mA)
(IC = 10A, IB = 100mA)
Base-Emitter On Voltage
(IC = 5.0A, VCE = 3.0V)
(IC = 10A, VCE = 3.0V)
Dynamic Characteristics
Small-Signal Current Gain
(IC = 1.0A, VCE = 5.0V, f = 1.0KHz)
Output Capacitance
(VCB = 10V, IE = 0, f = 1.0MHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle â¤2.0%.
Symbol
Minimum
Maximum
Unit
VCEO(sus)
80
-
V
ICEO
-
1.0
ICEX
-
0.3
mA
3.0
IEBO
5.0
-
hFE
1000
20,000
-
100
VCE(sat)
-
VBE(on)
-
2.0
3.0
V
2.8
4.5
hfe
1000
-
-
Cob
-
200
pF
Page 3
05/10/05 V1.1
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