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| 2N6109 Datasheet, PDF (3/6 Pages) List of Unclassifed Manufacturers – Complementary Power Transistors | |||
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2N6109, 6290
Complementary Power Transistors
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Minimum
Maximum
Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 100mA, IB = 0)
VCEO(sus)
50
-
V
Collector Cut off Current
(VCE = 40V, IB = 0)
ICEO
-
Collector Cut off Current
(VCE = 60V, VBE(off) = 1.5V)
(VCE = 50V, VBE(off) = 1.5V, TC = 125°C)
ICEX
-
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
IEBO
-
On Characteristics (1)
DC Current Gain
(IC = 2.5A, VCE = 4.0V)
(IC = 7.0A, VCE = 4.0V)
hFE
30
2.3
Collector-Emitter Saturation Voltage
(IC = 7.0A, IB = 3.0A)
Base-Emitter On Voltage
(IC = 7.0A, VCE = 4.0V)
Dynamic Characteristics
VCE(sat)
-
VBE(on)
-
Current Gain-Bandwidth Product (2)
(IC = 0.5A, VCE = 4.0V, f = 1.0MHz)
fT
2.5
10
Small Signal Current Gain
(IC = 0.5A, VCE = 4.0V, f = 50kHz)
hfe
20
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle â¤2.0%.
(2) fT = hfe ⢠ftest.
1.0
0.1
mA
2.0
1.0
150
-
3.5
V
3.0
-
MHz
-
-
Page 3
31/05/05 V1.0
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