YG226S8 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – FAST RECOVERY DIODE

(800V / 5A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
1
Tj=125^oC
Tj=100^oC
Tj=25^oC
0.1
0.01
0.0
0.5
1.0
1.5
2.0
2.5
IF Forward Voltage (V)
Forward Power Dissipation
12
1111^I2222^o333344445555666677778888999900001111222233334444555566667777
λ
10
360^o
8
Square wave λ=60^o
Square wave λ=120^o
6
Sine wave λ=180^o
Square wave λ=180^o
DC
4
2
Per 1element
0
0
1
2
3
4
5
6
Io Average Forward Current (A)
Junction Capacitance Characteristic (typ.)
100
YG226S8 (5A)
Reverse Characteristic (typ.)
10³
Tj=150^oC
Tj=125^oC
10²
Tj=100^oC
10¹
10⁰
Tj= 25^oC
10^-1
10^-2
0
100
200
300
400
500
600
VR Reverse Voltage (V)
Current Derating (Io-Tc)
150
140
DC
130
120
110
Square wave λ=180°C
Sine wave λ=180°C
Square wave λ=120°C
100
Square wave λ=60°C
90
80
70
60
50
0
1
2
3
4
5
λ ^{IO Average Output Current (A)}
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability
100
10
1
10
10
100
1000
1
10
VR Reverse Voltage (V)
Number of Cycles at 50Hz