TN815R Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – Silicon Controlled Rectifiers

TN815R
Electrical Characteristics ( T_C = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min. Typ. Max.
I_DRM
Repetitive Peak Off-State
Current
V_TM
Peak On-State Voltage (1)
I_GT
Gate Trigger Current (2)
V_AK = V_DRM
T_C = 25 °C
ȇ
T_C = 125 °C
ȇ
I_TM = 16 A
tp=380É«
ȇ
V_AK = 6 V(DC), R_L=10 Ç®
T_C = 25 °C
ȇ
ȇ
10
ɵ
ȇ
200
ȇ
1.6
V
ȇ
15
mA
V_GT
Gate Trigger Voltage (2)
V_D = 6 V(DC), R_L=10 Ç®
T_C = 25 °C
ȇ
ȇ
1.5
V
V_GD
Non-Trigger Gate Voltage (1) V_AK = 12 V, R_L=100 Ç®
T_C = 125 °C
0.2
ȇ
ȇ
V
dv/dt
Critical Rate of Rise Off-State ^{Linear slope up to V}D^=VDRM ^67%,
Voltage
Gate open
T_J = 125°C
200
ȇ
ȇ V/ɫ
I_H
Holding Current
I_T = 100mA, Gate Open
T_C = 25 °C
ȇ
ȇ
20
mA
R_th(j-c)
R_th(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
œ Notes :
1. Pulse Width = 1.0 ms , Duty cycle † 1%
2. R_GK Current not Included in measurement.
ȇ
ȇ
2.0 °C/W
ȇ
ȇ
70 °C/W
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