THN6301U Datasheet, PDF (2/10 Pages) List of Unclassifed Manufacturers – NPN Planer RF TRANSISTOR

THN6301U
Electrical Characteristics ( T_A = 25 )
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
VCEO
ICBO
IEBO
hfe
f_T
CCB
Collector-Base Voltage ICE = 100uA, IE = 0
Collector-Emitter Voltage ICE = 100uA, IB = 0
Collector-Cut-off current VCB = 10V, IE = 0
Emitter-Cut-off current VEB = 1V, IC = 0
D.C current Gain
VCE = 8V, Ic = 15mA
Transition Frequency
VCE = 8V, Ic = 15mA
Collector-Base Capacitance VCB = 10V, f = 1MHz
20 25
V
12 14
V
100 n A
100 n A
100 200 300
10
GHz
0.55
pF
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
[S21]²
MSG
NFmin
rn
GA
OIP3
VCE=8V, Ic=5mA,f=1GHz
Insertion Power Gain
VCE=8V, Ic=15mA,f=1GHz
VCE=8V, Ic=5mA,f=1GHz
Maximum Stable Gain
VCE=8V, Ic=15mA,f=1GHz
Minimum Noise Figure VCE=8V, Ic=5mA,f=1GHz
Noise Resistance VCE=8V, Ic=5mA,f=1GHz
Associated Gain
VCE=8V, Ic=5mA,f=1GHz
VCE=8V, Ic=15mA,f=1GHz
Output 3rd Intercept VCE=8V, Ic=15mA,f=1GHz
VALUE
11.5
13.5
16
17
1.1
0.055
14.5
15
27
Unit
dB
dB
dB
dB
dBm
www.tachyonics.co.kr
- 2/10 -
Sep-2003
Rev 1.1