THN3101Z Datasheet, PDF (2/10 Pages) List of Unclassifed Manufacturers – NPN Planer RF TRANSISTOR

THN3101Z
Electrical Characteristics ( T_A = 25 )
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
VCEO
ICBO
IEBO
hfe
f_T
CCB
Collector-Base Voltage ICE = 100uA, IE = 0
Collector-Emitter Voltage ICE = 100uA, IB = 0
Collector-Cut-off current VCB = 7V, IE = 0
Emitter-Cut-off current VEB = 1V, IC = 0
D.C current Gain
VCE = 2V, Ic = 10mA
Transition Frequency
VCE = 3V, Ic = 10mA
Collector-Base Capacitance VCB = 2V, f = 1MHz
7
12
V
4.5 5
V
300 n A
100 n A
200 300 400
25
GHz
0.06
pF
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
[S21]^{2 Insertion Power Gain}
Ic=5mA, (Zs = ZL = 50 )
Ic=15mA, (Zs = ZL = 50 )
MSG
Maximum Stable Gain
Ic=5mA, (Zs=Zsopt, ZL=ZLopt)
Ic=15mA, (Zs=Zsopt, ZL=ZLopt)
NFmin Minimum Noise Figure Ic=3mA, (Zs = Zsopt)
rn Noise Resistance
Ic=3mA, (Zs = Zsopt)
GA Associated Gain
Ic=3mA, (Zs = Zsopt)
Ic=10mA, (Zs = Zsopt)
P_-1dB
OIP₃
1dB Compression point Ic=5mA, (Zs=Zsopt, ZL=ZLopt)
Third order intercept point Ic=5mA, (Zs=Zsopt, ZL=ZLopt)
VALUE
18
19
21
22
1.1
0.37
16.5
18
5
15
Unit
dB
dB
dB
dB
dBm
dBm
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