T2N4401 Datasheet, PDF (2/7 Pages) List of Unclassifed Manufacturers – Low Power Bipolar Transistors

T2N4401
Low Power Bipolar Transistors
Absolute Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T_a = 25°C
Derate above 25°C
Power Dissipation at T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
T_j, T_stg
T2N4401
40
60
6
600
625
5.0
1.5
12
-55 to +150
Junction to Case
Junction to Ambient
Rth _(j-c)
Rth _(j-a)
83.3
200
Electrical Characteristics (T_a = 25°C unless otherwise specified)
Characteristic
Symbol
T2N4401
Collector Emitter Voltage
I_C = 1mA, IB = 0
Collector Base Voltage
IC = 100µA, I_E = 0
Emitter Base Voltage
I_E = 100µA, I_C = 0
Base Cut off Current
V_CE = 35V, V_EB = 0.4V
Collector Cut off Current
V_CE = 35V, V_EB = 0.4V
Collector Emitter Saturation Voltage
I_C = 150mA, I_B = 15mA
I_C = 500mA, I_B = 50mA
BV_CEO*
BV_CBO
BV_EBO
I_BEV
I_CEX
V_{CE (Sat)}*
>40
>60
>6
<0.1
<0.4
<0.75
Base Emitter Saturation Voltage
I_C = 150mA, I_B = 15mA
I_C = 500mA, I_B = 50mA
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%
V_{BE (Sat)}*
0.75 - 0.95
<1.2
Unit
V
mA
mW
mW/°C
W
W/°C
°C
°C/W
Unit
V
µA
V
Page 2
10/04/06 V1.0