SUR522H Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – Epitaxial Planar Type NPN Silicon Transistor

Absolute maximum ratings [Tr1, Tr2 : NPN ]
Characteristic
Symbol
Out Voltage
V_O
Input Voltage
V_I
Out Current
I_O
Power Dissipation
P_D
Junction Temperature
T_J
Storage Temperature
T_STG
Ratings
50
20
100
150
150
-55 ~ 150
SUR522H
Ta=25°C
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1,Tr2:NPN]
Characteristic
Symbol
Test Condition
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE
V_CE=5V, I_C=1mA
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
V_CE(SAT)
f_T^*
R₁
I_C=10mA, I_B=0.5mA
V_CE=10V, I_C=5mA
-
* : Characteristic of Transistor Only
(Ta=25°C)
Min. Typ. Max. Unit
-
-
500 nA
-
-
500 nA
120
-
-
-
-
0.1 0.3
V
-
250
-
MHz
-
10
-
KΩ
KST-5015-000
2