SSM25G45EM Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR

180
160 _{T A =25 o C}
140
5.0V
4.5V
4.0V
120
100
3.0V
80
60
2.0V
40
20
VG=1.0V
0
0
2
4
6
8
10
V _CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
SSM25G45EM
140
120 T _A =150 ^o C
100
80
5.0V
4.5V
4.0V
3.0V
60
2.0V
40
20
VG=1.0V
0
0
2
4
6
8
10
12
V _CE , Collector-Emitter Voltage (V)
Fig 2. Typical Output Characteristics
160
V _CE =4.5V
120
25°C
70°C
125°C
T _A =150°C
80
40
10
V _GE =4.5V
8
6
4
2
I _C =130A
I _C =100A
I _C =50A
0
0
1
2
3
4
5
6
V _GE , Cate-Emitter Voltage (V)
Fig 3. Collector Current vs.
Gate-Emitter Voltage
1.5
0
0
20
40
60
80
100
120
140
160
Junction Temperature ( ^o C)
Fig 4. Collector- Emitter Saturation Voltage
vs. Junction Temperature
200
1.2
160
0.9
120
0.6
80
0.3
40
0
-50
0
50
100
150
Junction Temperature ( ^o C )
Fig 5. Gate Threshold Voltage
vs. Junction Temperature
0
0
1
2
3
4
5
6
7
V _GE , Gate-to-Emitter Voltage (V)
Fig 6. Minimum Gate Drive Area
9/21/2004 Rev.2.01
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