SSG9435 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG9435
-5.3A, -30V,RDS(ON) 50m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C^o Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance²
RDS(ON)
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.037
_
_
_
_
_
_
28
3
7
_
_
_
_
_
_
_
20
Max.
_
_
-3.0
±100
-1
-5
50
90
_
_
_
9
15
75
40
745
440
350
_
Unit
Test Condition
V
V/ ^oC
VGS=0V, ID=-250uA
Reference to 25 ^oC,ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±20V
uA
VDS=-30V,VGS=0
uA
VDS=-24V,VGS=0
VGS=-10V, ID=-8A
m
VGS=-4.5V, ID=-5A
ID=-4.6A
nC
VDS=-15V
VGS=-10V
VDD=-15V
ID=-1A
nS
VGS=-10V
RG=6
RD=15
VGS=0V
pF
VDS=-15V
f=1.0MHz
S
VDS=-10V, ID=-8A
Source-Drain Diode
Parameter
Forward On Voltage ²
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Symbol
VDS
Is
ISM
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Min.
_
_
_
Typ.
-0.75
_
_
Max.
-1.2
-2.1
-50
Unit Test Condition
V
IS=-2.1A, VGS=0V.
A
VD=VG=0V, VS=-1.2V
A
Any changing of specification will not be informed individual
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