SLD432S Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output

Light-current
50
CW drive
Tc = 25°C
40
30
20
Far field pattern
1.0
CW drive
Tc = 25°C
0.8 Po = 40 W
θ⊥
0.6
θ//
0.4
10
0.2
0
0
15
30
45
60
If [A]
0.0
–40 –20 0
20 40
Angle [deg.]
s Figure 1 SLD432S Representative Characteristics
Spectrum
1.0
CW drive
Tc = 25°C
0.8 Po = 40 W
0.6
0.4
0.2
0.0
790 800 810 820 830
Wavelength [nm]
Laser beam
emitting point
100 µm
P-side electrode
Active layer
GaAs substrate
N-side electrode
s Table 1 SLD432S Main Characteristics
Item
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation
angle
Parallel to
junction
Perpendicular
to junction
Differential efficiency
Symbol Typical value Unit
Ith
13
A
Iop
50
Vop
1.9
V
λp
808
nm
θ//
8
deg.
θ⊥
24
ηD
1.2
W/A
Conditions: TC = 25°C
Po =40 W@CW
s Figure 2 SLD432S Chip Structure
17.8
M3
5.5
3-cross-recessed head
Machine screws (M2)
2-φ3.2
LD (–)
LD (+)
10 ±0.2
15
24.9 ±0.2
LD chip
6
7
8
9
(10.3)
4.7 ±0.1
φ2 depth4
s Figure 3 SLD432S Package Dimensions
(Unit: mm)