SLD234VL Datasheet, PDF (2/2 Pages) Sony Corporation – Index-Guided High Power AlGaAs Laser Diode

p-GaAs
n-AlGaAs
(low absorption layer)
p-AlGaAs
Active layer
n-AlGaAs
GaAs substrate
s Figure 1 SLD234VL Chip Structure (Real Index Structure)
150
Pulse
100
CW
50
0
0
s Figure 2-1
100
200
Current [mA]
SLD234VL I-L Characteristics
Horizontal direction
Vertical direction
-45
-30
-15
0
15
30
45
Angle [deg]
s Figure 2-2 SLD234VL Far Field Pattern
775
780
785
790
795
Wavelength [nm]
s Figure 2-3 SLD234VL Spectrum
I-L (Pulse)
120
20°C
80°C
100
80
60
40
20
0
0
50
100
150
200
Current [mA]
s Figure 3 SLD234VL Temperature Characteristics
Tc = 75°C, Po = 80mW (Pulse Width 600ns, duty 50%)
200
150
100
50
0
0
200
400
600
800
1000
Operation Time [H]
s Figure 4 SLD234VL Reliability Characteristics