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OP58TS Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – High speed, high output pin photo diode
Photo Diode
■ Description
The OP58TS is a high speed, high output pin photo diode,
mounted in a low-cost PCB package.
■ Features
● High output power
● High-speed response
● Easy to mount on PCB
● Low dark current
■ Applications
● Fiber optic communication
● Optical switches
■ Absolute Maximum Ratings
OP58TS
(Ta= 25℃)
Parameter
Symbol
Reverse Breakdown Voltage
BVR
Junction Temperature
Operating Temperature
TJ
TOPR
Storage Temperature
TSTG
■ Electro-Optical Characteristics
Ratings
30
150
-20 ~ 80
-30 ~ 90
Unit
V
℃
℃
℃
(Ta=25℃)
Parameter
Symbol
Conditions
Open Circuit Voltage
Voc
Ev=1,000lux *1
Short Circuit Current
ISC
Ev=1,000lux *1
ISC
Condition*2
Dark Current
ID
VR=5V
Capacitance
Ct
f=1MHz
Temp. Coefficient of Voc
αt
Temp. Coefficient of Isc
βt
Spectrum Sensitivity
λ
Peak Sensing Wavelength
λp
Reverse Breakdown Voltage
Half Angle
BVR
ΔΘ
Ir=10㎂
*1 : Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K
*2 : Light source : Laser Diode (λ=780nm), IF=20, Distance = 30mm
Opto-Device Technology
Min
0.35
19
-
-
-
-
-
450
-
30
-
Typ
0.38
30.5
4
22
-2.2
0.18
-
940
70
±60
Max
-
-
-
100
-
-
-
1100
-
-
-
Unit
V
㎂
㎂
㎁
㎊
㎷/℃
%/℃
nm
nm
V
Deg.
2
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