MSK4400S Datasheet, PDF (2/5 Pages) M.S. Kennedy Corporation – 10 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE

ABSOLUTE MAXIMUM RATINGS
V+
High Voltage Supply 75V ○
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V Bias Supply 16V BIAS
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VIND Logic Input Voltages ○ ○ ○ ○ -0.3V to VBIAS +0.3V
IOUT Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A
IPK
Peak Output Current 25A ○
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θJC Thermal Resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 3.9 C/W
TST Storage Temperature Range ○
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-55°C to +150°C
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TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +300°C
(10 Seconds)
TC Case Operating Temperature ○ ○ ○ -40°C to +125°C
TJ
Junction Temperature ○
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+150°C
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ELECTRICAL SPECIFICATIONS
Parameter
CONTROL SECTION
VBIAS Quiescent Current 4
VBIAS Operating Current 4
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Resistance (Each FET) 1
Voltage Drop Across Bridge Phase 2 4
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
Enable Turn-On Prop Delay (Lower)
Enable Turn-Off Prop Delay (Lower)
Enable Turn-On Prop Delay (Upper)
Enable Turn-Off Prop Delay (Upper)
Dead Time
Dead Time 4
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
Test Condition
@ 25°C unless otherwise specified
All Inputs Off
f=20KHz, 50% Duty Cycle
VIN=0V
VIN=5V
ID=100µA, All Inputs Off
VDS=70V
ID=25A
ID=10A
V+=38V
ID=25A Peak
SWR Resistor=∞
SWR Resistor=∞
SWR=Open
SWR=12K
ISD=10A
ISD=10A, di/dt=100A/µS
Min.
MSK 4400
Typ. 3
Max.
Units
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5.75
6.2
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2.7
60
-1
6
7
mAmp
22
25
mAmp
6.6
7.5
Volts
7.1
8.0
Volts
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0.8
Volts
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-
Volts
100
135 µAmp
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+1
µAmp
75
-
-
V
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50
µAmp
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-
0.033
Ω
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1.3
1.5 VOLTS
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62
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nSec
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58
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nSec
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100
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µSec
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100
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µSec
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2
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µSec
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2
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µSec
6.0
7.0
8.0
µSec
0.3
0.5
0.7
µSec
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1.7
Volts
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120
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nSec
NOTES:
1 Use for maximum MOSFET junction temperature calculations.
2 Use for overall efficiency and dissipation calculations.
3 Typical parameters are representative of actual device performance but are for reference only.
4 Parameter is 100% tested on production devices. All other parameters are guaranteed.
2
Rev.E 6/01