MSK3020 Datasheet, PDF (2/6 Pages) M.S. Kennedy Corporation – H-BRIDGE MOSFET POWER MODULE

ABSOLUTE MAXIMUM RATINGS
VDSS Drain to Source Voltage ........... 100V MAX
VDGDR Drain to Gate Voltage
(RGS = 1 MW ) ........................ 100V MAX
VGS Gate to Source Voltage
(Continuous) ........................... ±20V MAX
ID
Continuous Current .................... 10A MAX
IDM
Pulsed Current ........................... 25A MAX
RTH-JC Thermal Resistance
(Junction to Case) ......................... 4.0°C/W
IM
Sense Current - Continuous ...... 13 mA
MAX
IMM
Sense Current Peak ................. 33 mA
MEALXECTRICAL SPECIFICATIONS
Single Pulse Avalanche Energy
(Q1, Q4) ........................................................ 7.9 mJ
(Q2, Q3) ......................................................... 69 mJ
TJ Junction Temperature ............................ +175°C MAX
TST Storage Temperature ........................ -55°C
to
+
1
5
0
°
C
TC Case Operating Temperature Range .... -55°C
to
+
1
2
5
°
C
TLD Lead Temperature Range
(10 Seconds) ........................................... 300°C MAX
Parameter
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance 2
Drain-Source on Resistance 3
Forward Transconductance 1
N-CHANNEL (Q2, Q3)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge 1
Test Conditions 4
VGS = 0 ID = 0.25 mA (All Transistors)
VGS = 0 VDS = 100V, (Q2, Q3)
VDS = 100V VGS = 0V, (Q2, Q3)
VDS = -100V VGS = 0V, (Q1, Q4)
VGS = ±20V VDS = 0V (All Transistors)
VDS = VGS ID = 250 µA (Q2, Q3)
VDS = VGS ID = 250 µA (Q1, Q4)
VGS = 10V ID = 8.4A (Q2, Q3)
VGS = -10V ID = -8.4A (Q1, Q4)
VGS = 10V ID = 8.4A (Q2, Q3)
VGS = -10V ID = -8.4A (Q1, Q4)
VDS = 50V ID = 8.4A (Q2, Q3)
VDS = -50V ID = -8.4A (Q1, Q4)
ID = 14A
VDS = 80V
VGS = 10V
VDD = 50V
ID = 14A
RG = 12W
RD = 3.5W
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V ID = 14A
ID = -8.4A
VDS = -80V
VGS = -10V
VDD = -50V
ID = -8.4A
RG = 9.1W
RD = 6.2W
VGS = 0V
VDS = -25V
f = 1 MHz
IS = 14A VGS = 0V (Q2, Q3)
IS = -14A VGS = 0V (Q1, Q4)
IS = 14A di/dt = 100A/µS (Q2, Q3)
IS = -8.4A di/dt = 100A/µS (Q1, Q4)
IS = 14A di/dt = 100A/µS (Q2, Q3)
IS = -8.4A di/dt = 100A/µS (Q1, Q4)
MSK 3020
Min. Typ. Max.
100
-
-
100
-
-
-
-
25
-
-
-25
-
-
±100
2.0
-
4.0
-2.0
-
-4.0
-
-
0.26
-
-
0.31
-
-
0.16
-
-
0.20
4.7
-
-
3.2
-
-
-
-
26
-
-
5.5
-
-
11
-
9.5
-
-
42
-
-
22
-
-
25
-
-
700
-
-
320
-
-
83
-
-
9
-
1390
-
1540
-
-
58
-
-
8.3
-
-
32
-
15
-
-
58
-
-
45
-
-
46
-
-
760
-
-
260
-
-
170
-
-
2.5
-
-
-1.6
-
-
150
310
-
47
71
-
0.85
1.2
-
650
970
Units
V
V
µA
µA
nA
V
V
W
W
W
W
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
µC
nC
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance
but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA = 25°C unless otherwise specified.
2
Rev. A 7/00