MSK3002 Datasheet, PDF (2/6 Pages) M.S. Kennedy Corporation – H-BRIDGE MOSFET POWER MODULE

ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
IM
IMM
Drain to Source Voltage ○ ○ ○ ○ ○ ○ 55V MAX
Drain to Gate Voltage
(RGS = 1 MΩ) 55V MAX ○
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Gate to Source Voltage
(Continuous) ^{○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○} ±20V MAX
Continuous Current ○ ○ ○ ○ ○ ○ ○ ○ 10A MAX
Pulsed Current ^{○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○} 25A MAX
Thermal Resistance
(Junction to Case) ○ ○ ○ ○ ○ ○ ○ ○ ○ 7.9°C/W
Sense Current - Continuou ○ ○ 13 mA MAX
Sense Current Peak ○ ○ ○ ○ ○ ○ 33 mA MAX
TJ
TST
TC
TLD
Single Pulse Avalanche Energy
(Q1,Q4)
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○ 6.0J
(Q2,Q3) 71 mJ ○
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JunctionTemperature^{○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○}+175°CMAX
Storage Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +150°C
Case Operating Temperature Range ○ ○ ○ -55°C to +125°C
Lead Temperature Range
(10Seconds) 300°C MAX ○
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ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance 2
Drain-Source on Resistance 3
Forward Transconductance 1
N-CHANNEL (Q2, Q3)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge 1
Test Conditions 4
VGS = 0 ID = 0.25 mA (All Transistors)
VGS = 0 VDS = 55V, (Q2, Q3)
VDS = 55V VGS = 0V, (Q2, Q3)
VDS = -55V VGS = 0V, (Q1, Q4)
VGS = ±20V VDS = 0V (All Transistors)
VDS = VGS ID = 250 µA (Q2, Q3)
VDS = VGS ID = 250 µA (Q1, Q4)
VGS = 10V ID = 10A (Q2, Q3)
VGS = -10V ID = -7.2A (Q1, Q4)
VGS = 10V ID = 10A (Q2, Q3)
VGS = -10V ID = -7.2A (Q1, Q4)
VDS = 25V ID = 10A (Q2, Q3)
VDS = -25V ID = -7.2A (Q1, Q4)
MSK 3002
Min. Typ. Max.
55
-
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55
-
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25
-
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-25
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-
±100
2.0
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4.5
-2.0
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-4.5
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-
0.20
-
-
0.28
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0.10
-
-
0.175
5.8
-
-
2.5
-
-
ID = 17A
VDS = 48V
VGS = 10V
VDD = 30V
ID = 17A
RG = 18Ω
RD = 1.7Ω
VGS = 0V
VDS = 25V
f = 1 MHz
ID = 17A
-
-
24
-
-
6.3
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-
9
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12
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-
59
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25
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38
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720
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360
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75
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14
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740
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820
ID = -7.2A
VDS = -44V
VGS = -10V
VDD = -28V
ID = -7.2A
RG = 24Ω
RD = 3.7Ω
VGS = 0V
VDS = -25V
f = 1 MHz
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19
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5.1
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10
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13
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55
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23
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37
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350
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170
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92
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IS = 17A VGS = 0V (Q2, Q3)
IS = -7.2A VGS = 0V (Q1, Q4)
IS = 17A di/dt = 100A/µS (Q2, Q3)
IS = -7.2A di/dt = 100A/µS (Q1, Q4)
IS = 17A di/dt = 100A/µS (Q2, Q3)
IS = -7.2A di/dt = 100A/µS (Q1, Q4)
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1.5
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-1.6
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87
180
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47
71
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0.29 0.60
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0.084 0.13
Units
V
V
µA
µA
nA
V
V
Ω
Ω
Ω
Ω
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
µC
µC
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but
are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA = 25°C unless otherwise specified.
2
Rev. C 7/00