MSK3001 Datasheet, PDF (2/5 Pages) M.S. Kennedy Corporation – THREE PHASE BRIDGE MOSFET POWER MODULE

ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
Drain to Source Voltage ○ ○ ○ ○ 100V MAX
Drain to Gate Voltage
(R =1MΩ) 100V MAX GS
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Gate to Source Voltage
(Continuous)
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○ ±20V MAX
Continuous Current
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○ 5.6A MAX
Pulsed Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 22A MAX
Thermal Resistance
(Junction to Case) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 6°C/W
ELECTRICAL SPECIFICATIONS
Single Pulse Avalanche Energy
(Q1,Q3,Q5) 91mJ ○
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(Q2,Q4,Q6) 210mJ ○
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TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +175°C MAX
TST Storage Temperature ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +150°C
TC Case Operating Temperature Range -55°C to +125°C
TLD Lead Temperature Range
(10 Seconds) 300°C MAX ○
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Parameter
Test Conditions 4
Min.
MSK3001
Typ.
Max.
Units
Drain-Source Breakdown Voltage
VGS=0 ID=0.25mA (All Transistors)
100
-
-
V
Drain-Source Leakage Current
VDS=100V VGS=0V (Q1,Q3,Q5)
VDS=-100V VGS=0V (Q2,Q4,Q6)
-
-
25
µA
-
-
-100
µA
Gate-Source Leakage Current
VGS=±20V VDS=0 (All Transistors)
-
-
±100
nA
Gate-Source Threshold Voltage
VDS=VGS ID=250µA (Q1,Q3,Q5)
VDS=VGS ID=250µA (Q2,Q4,Q6)
2.0
-
4.0
V
-2.0
-
-4.0
V
Drain-Source On Resistance 2
VGS=10V ID=5.6A (Q1,Q3,Q5)
VGS=-10V ID=-3.4A (Q2,Q4,Q6)
-
0.18
0.30
Ω
-
0.37
0.75
Ω
Drain-Source On Resistance 3
VGS=10V ID=5.6A (Q1,Q3,Q5)
VGS=10V ID=-3.4A (Q2,Q4,Q6)
-
-
0.21
Ω
-
-
0.60
Ω
Forward Transconductance 1
VDS=25V ID=5.7A (Q1,Q3,Q5)
VDS=-50V ID=-3.4A (Q2,Q4,Q6)
2.7
-
1.5
-
-
S
-
S
N-Channel (Q1,Q3,Q5)
Total Gate Charge 1
ID=5.7A
-
-
25
nC
Gate-Source Charge ¹
VDS=80V
-
-
4.8
nC
Gate-Drain Charge 1
VGS=10V
-
-
11
nC
Turn-On Delay Time 1
VDD=50V
-
4.5
-
nS
Rise Time 1
ID=5.7A
-
23
-
nS
Turn-Off Delay Time 1
RG=22Ω
-
32
-
nS
Fall Time 1
RD=8.6Ω
-
23
-
nS
Input Capacitance 1
VGS=0V
-
330
-
pF
Output Capacitance 1
VDS=25V
-
92
-
pF
Reverse Transfer Capacitance 1
f=1MHz
-
54
-
pF
P-CHANNEL (Q2,Q4,Q6)
Total Gate Charge 1
ID=-6.8A
-
-
18
nC
Gate-Source Charge 1
VDS=-80V
-
-
3.0
nC
Gate-Drain Charge 1
VGS=-10V
-
-
9.0
nC
Turn-On Delay Time 1
VDD=-50V
-
9.6
-
nS
Rise Time 1
ID=-6.8A
-
29
-
nS
Turn-Off Delay Time 1
RG=18Ω
-
21
-
nS
Fall Time 1
RD=7.1Ω
-
25
-
nS
Input Capacitance 1
VGS=0V
-
390
-
pF
Output Capacitance 1
VDS=-25V
-
170
-
pF
Reverse Transfer Capacitance 1
f=1MHz
-
45
-
pF
BODY DIODE
Forward On Voltage 1
IS=5.5A VGS=0V (Q1,Q3,Q5)
IS=-5.6A VGS=0V (Q2,Q4,Q6)
-
1.3
-
V
-
-1.6
-
V
Reverse Recovery Time 1
IS=5.7A di/dt=100A/µS (Q1,Q3,Q5)
IS=-6.8A di/dt=100A/µS (Q2,Q4,Q6)
-
99
150
nS
-
100
200
nS
Reverse Recovery Charge 1
IS=5.7A di/dt=100A/µS (Q1,Q3,Q5)
IS=-6.8A di/dt=100A/µS (Q2,Q4,Q6)
-
0.39
0.58
µC
-
0.33
0.66
µC
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA=25°C unless otherwise specified.
2
Rev. B 7/00