MC74VHC1G03 Datasheet, PDF (2/4 Pages) ON Semiconductor – 2-Input NOR Gate with Open Drain Output

LESHAN RADIO COMPANY, LTD.
MC74VHC1G03
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CC
V IN
V OUT
DC Supply Voltage
DC Input Voltage
DC Output Voltage
– 0.5 to + 7.0
V
– 0.5 to 7.0
V
V CC=0
– 0.5 to 7.0
V
High or Low State
–0.5 to V cc + 0.5
I IK
I OK
I OUT
I CC
PD
θ JA
TL
TJ
T stg
Input Diode Current
Output Diode Current
DC Output Current, per Pin
V < GND; V > V
OUT
OUT
CC
DC Supply Current, V CC and GND
Power dissipation in still air
SC–88A, TSOP–5
Thermal resistance
SC–88A, TSOP–5
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V CC
V IN
V OUT
TA
t r ,t f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V _CC = 3.3 ± 0.3 V
V _CC = 5.0 ± 0.5 V
2.0
5.5
V
0.0
5.5
V
0.0
7.0
V
– 55
+ 125
°C
0
100
ns/V
0
20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH3–2/4