HWD2182 Datasheet, PDF (2/12 Pages) List of Unclassifed Manufacturers – 250mW Audio Power Amplifier with Shutdown Mode

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the CSMSC Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation (Note 3)
ESD Susceptibility (Note 4)
PIn 5
Junction Temperature
Soldering Information
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
6.0 V
−65˚C to +150˚C
−0.3V to V_DD + 0.3V
Internally limited
2000V
1500V
150˚C
215˚C
220˚C
See AN-450 ″Surface Mounting and their Effects on
Product Reliability″ for other methods of soldering surface
mount devices.
Thermal Resistance
θ_JC (MSOP)
θ_JA (MSOP)
θ_JC (SOP)
θ_JA (SOP)
56˚C/W
210˚C/W
35˚C/W
170˚C/W
Operating Ratings
Temperature Range
T_MIN ≤ T_A ≤ T_MAX
Supply Voltage
−40˚C ≤ T_A ≤ 85˚C
2.4V ≤ V_DD ≤ 5.5V
Electrical Characteristics (Notes 1, 2)
The following specifications apply for V_DD = 5V unless otherwise specified. Limits apply for T_A = 25˚C.
Symbol
Parameter
Conditions
HWD2182
Typical Limit
(Note 5) (Note 6)
I_DD
Quiescent Current
I_SD
Shutdown Current
V_OS
Offset Voltage
P_O
Output Power
V_IN = 0V, I_O = 0A
V_pin1 = V_DD
V_IN = 0V
THD + N = 1% (max); f = 1 kHz;
R_L = 4Ω
R_L = 8Ω
R_L = 32Ω
THD + N = 10%; f = 1 kHz
2
4.0
0.5
5
5
50
380
270
250
95
R_L = 4Ω
480
R_L = 8Ω
325
R_L = 32Ω
125
THD + N
Total Harmonic Distortion + Noise R_L = 8Ω, P _O = 250 mWrms;
0.5
R_L = 32Ω, P_O = 85 mWrms;
0.1
f = 1 kHz
PSRR
Power Supply Rejection Ratio
V_pin3 = 2.5V, V _ripple = 200 mVrms,
50
f = 120 Hz
Units
(Limits)
mA (max)
µA (max)
mV (max)
mW
mW (min)
mW
mW
mW
mW
%
%
dB
Electrical Characteristics (Notes 1, 2)
The following specifications apply for V_DD = 3V unless otherwise specified. Limits apply for T_A = 25˚C.
Symbol
Parameter
Conditions
HWD2182
Typical Limit
(Note 5) (Note 6)
I_DD
Quiescent Current
I_SD
Shutdown Current
V_OS
Offset Voltage
P_O
Output Power
V_IN = 0V, I_O = 0A
1.2
V_pin1 = V_DD
0.3
V_IN = 0V
5
THD + N = 1% (max); f = 1 kHz
R_L = 8Ω
80
R_L = 32Ω
30
THD + N = 10%; f = 1 kHz
R_L = 8Ω
105
R_L = 32Ω
40
Units
(Limits)
mA
µA
mV
mW
mW
mW
mW
2