HCT7000 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – N- Channel En hance ment Mode MOS Transistor

Types HCT7000M, HCT7000MTX, HCT7000MTXV
Electrical Characteristics (T_A = 25^o C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITION
V_DSS Drain-Source Voltage
60
V V_GS = 0 V, I_D = 10 µA
VGS(TH) Gate Threshold Voltage
.8 3.0
V VDS = VGS, ID = 1 mA
I_GSS Gate Leakage
IDSS Zero Gate Voltage Drain Current
±10 nA VDS = 0 V, VGS = ±15 V
1
µ_{A VGS = 0 V, VDS = 48 V}
ID(ON) On-State Drain Current
R_DS(ON) Drain-Source on-Resistance
75
5
mA VDS = 10 V, VGS = 4.5 V
Ω _{VGS = 10 V, ID = 0.5 A}
V_DS(ON) Drain-Source on-Voltage
2.5
V V_GS = 10 V, I_D = 0.5 A
G_fs
Forward Transconductance
100
mS V_DS = 10 V, I_D = 0.2 A
Ciss Input Capacitance
60 pF VDS = 25 V, VGS = 0 V, f = 1MHz
Coss Output Capacitance
25 pF
Crss Reverse Transfer Capacitance
5
pF
t(on)
Turn-on Time
t_(off)
Turn-off Time
10
ns V_DD = 15 V, I_D = 0.5 A, V_gen = 10 V, R_g = 25 Ω
10 ns
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Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
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