HBT169M Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – THYRISTORS

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200105
Issued Date : 2001.10.01
Revised Date : 2001.11.20
Page No. : 2/4
Thermal Resistances
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Rth j-lead Thermal resistance junction to lead
pcb mounted;
-
-
60 K/W
Rth j-a Thermal resistance junction to ambient lead length=4mm
-
150
- K/W
Static Characteristics (Ta=25°C)
Symbol
Parameter
I_GT Gate Trigger Current
I_L
Latching Current
I_H
Holding Current
V_T On-state Voltage
V_GT Gate Trigger Voltage
I_D,I_R
Off-state Leakage
Current
Conditions
Min. Typ. Max. Unit
V_D=12V, I_T=10mA
Gate open circuit
-
50 200 uA
V_D=12V, I_GT=0.5mA; R_GK=1kΩ
V_D=12V, I_GT=0.5mA; R_GK=1kΩ
I_T=1A
V_D=12V, I_T=10mA
Gate open circuit
-
2
6 mA
-
2
5 mA
-
1.2 1.35 V
-
0.5 0.8
V
V_D= V_DRM(max), I_T=10mA; Tj=125°C
0.2
0.2
-
V
Gate open circuit
V_D=V_DRM(max); V_R= V_RRM(max);
Tj=125°C; R_GK=1kΩ
- 0.05 0.1 mA
Static Characteristics
Symbol
dV_D/dt
tgt
tq
Parameter
Conditions
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
V_DM=67% V_DRM(max); Tj=125°C
exponential waveform; R_GK=1kΩ
I_TM=2A; V_D=V_DRM(max)
I_G=10mA; dI_G/dt=0.1A/us
V_D=67% V_DRM(max); Tj=125°C
I_TM=1.6A; V_R=35V; dI_TM/dt=30A/us
dV_D/dt=2V/us; R_GK=1kΩ
Min.
500
-
-
Typ.
800
2
100
Max.
-
-
-
Unit
V/us
us
us
HBT169M
HSMC Product Specification