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| GTT8205S Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.03
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.5
gfs
-
20
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±8V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
28
VGS=4.5V, ID=6.0A
m
-
38
VGS=2.5V, ID=5.2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
23
-
ID=6A
Qgs
-
4.5
-
nC VDS=20V
Qgd
-
7
-
VGS=5V
Td(on)
-
30
-
VDS=10V
Tr
-
70
-
ID=1A
ns VGS=5V
Td(off)
-
40
-
RG=6
Tf
-
65
-
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1035 -
-
320
-
-
150
-
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit
Test Conditions
V IS=1.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, tÐ5sec; 180к/W when mounted on Min. copper pad.
GTT8205S
Page: 2/4
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