COM140T Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – (COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PACKAGE

ELECTRICAL CHARACTERISTICS: T_C = 25° unless otherwise noted
STATIC P/N COM140T
Parameter
Min. Typ. Max. Units Test Conditions
B V_DSS Drain-Source Breakdown
Voltage
V _GS(th)
I_{G S S F}
I_{G S S R}
I_{D S S}
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I_D(on)
V _DS(on)
On-State Drain Current¹
Static Drain-Source On-State
Voltage¹
100
V V_{G S} = 0,
I_D = 250 mA
2.0
4.0 V V_{D S} = V_{G S},I_D = 250 mA
100 nA V_{G S} = 20 V
-100 nA V_{G S} = - 20 V
0.1 0.25 m A V_{D S} = Max. Rat., V_{G S} = 0
0.2 1.0 m A V_{D S} = 0.8 Max. Rat., V_{G S} = 0,
T_C = 125° C
14
A V_{D S} 2 V_DS(on),V_{G S} = 10 V
1.40 1.73 V V_{G S} = 10 V, I_D = 15 A
R _DS(on) Static Drain-Source On-State
Resistance¹
.12
V_{G S} = 10 V, I_D = 15 A
R _DS(on) Static Drain-Source On-State
Resistance¹
.22
V_{G S} = 10 V, I_D = 15 A,
T_C = 125 C
DYNAMIC
g_fs
C _iss
C _oss
C _rss
T_d(on)
t_r
T_d(off)
t_f
Forward Transductance¹
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10
1275
550
160
16
19
42
24
S(W ) V_{D S} 2 V_DS(on),I_D = 15 A
pF V_{G S} = 0
pF V_{D S} = 25 V
pF f = 1 MHz
ns V_{D D} = 30 V, I_D @5 A
ns R _g = 5 W ,V_{G S} =10 V
ns ^{(MOSFET) switching times are}
essentially independent of
ns operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I_S
Continuous Source Current
(Body Diode)
I_{S M} Source Current¹
(Body Diode)
V_{S D} Diode Forward Voltage¹
t_r
Reverse Recovery Time
- 27 A
- 108 A
- 2.0 V
200
ns
Modified MOSPOWER ^D
symbol showing
the integral P-N ^G
Junction rectifier.
S
T_C = 25 C,I_S = -24 A, V_{G S} = 0
T_J = 150 C,I_F =I_S,
dl_F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: T_C = 25° unless otherwise noted
STATIC P/N COM240T
Parameter
Min. Typ. Max. Units Test Conditions
B V_DSS Drain-Source Breakdown
Voltage
V _GS(th)
I_{G S S F}
I_{G S S R}
I_{D S S}
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I_D(on)
V _DS(on)
On-State Drain Current¹
Static Drain-Source On-State
Voltage¹
200
V
2.0
4.0 V
100 nA
- 100 nA
0.1 0.25 m A
0.2 1.0 m A
14
A
1.8 2.1 V
V_{G S} = 0,
I_D = 250 mA
V_{D S} = V_{G S,} I_D = 250 mA
V_{G S} = 20 V
V_{G S} = - 20 V
V_{D S} = Max. Rat., V_{G S} = 0
V_{D S} = 0.8 Max. Rat., V_{G S} = 0,
T_C = 125° C
V_{D S} 2 V_DS(on),V_{G S} = 10 V
V_{G S} = 10 V, I_D = 10 A
R _DS(on) Static Drain-Source On-State
Resistance¹
0.21
V_{G S} = 10 V, I_D = 10 A
R _DS(on) Static Drain-Source On-State
Resistance¹
0.41
V_{G S} = 10 V, I_D = 10 A,
T_C = 125 C
DYNAMIC
g_fs
C _iss
C _oss
C _rss
T_d(on)
t_r
T_d(off)
t_f
Forward Transductance¹
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
1000
250
100
17
52
36
30
S(W ) V_{D S} 2 V_DS(on),I_D = 10 A
pF V_{G S} = 0
pF V_{D S} = 25 V
pF f = 1 MHz
ns V_{D D} =75 V, I_D @ 18 A
ns R _g =5 W ,V_{G S}= 10 V
ns ^{(MOSFET) switching times are}
essentially independent of
ns operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I_S
Continuous Source Current
(Body Diode)
I_{S M} Source Current¹
(Body Diode)
V_{S D} Diode Forward Voltage¹
t_r
Reverse Recovery Time
- 18 A Modified MOSPOWER ^D
symbol showing
- 72 A the integral P-N ^G
Junction rectifier.
S
-1.5 V T_C = 25 C,I_S = -18 A, V_{G S} = 0
350
ns T_J = 150 C,I_F =I_S,
dl_F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.