CFB0303 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – High Dynamic Range Low-Noise GaAs FET

CFB0303
Advanced Product Information - June 2002
(2 of 2)
Typical Noise Parameters (Vds = 4 V, Ids = 75 mA)
Frequency
(GHz)
Fmin ¹
(dB)
Gamma Opt
Mag
Ang
Rn/50
0.8
0.4
0.6
27
0.19
1.0
0.4
0.6
29
0.17
1.2
0.4
0.6
32
0.18
1.4
0.4
0.6
35
0.18
1.6
0.4
0.5
38
0.17
1.8
0.4
0.5
41
0.16
2.0
0.5
0.5
45
0.15
2.2
0.5
0.5
49
0.15
2.4
0.5
0.5
54
0.14
2.6
0.5
0.5
60
0.13
Note: 1. Fmin values reflect the circuit losses in the test fixture when
matched to optimum noise figure.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation¹
Channel Temperature
Storage Temperature
Symbol
Vds
Vgs
Ids
Pt
Tch
Tstg
Rating
+8V
-5V
Idss
750 mW
175°C
-65°C to +150°C
Notes
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suitability of its products for any particular purpose, nor does Celeritek assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating
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