BTA12 Datasheet, PDF (2/5 Pages) STMicroelectronics – 12A TRIACS

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) n
Symbol
SNUBBERLESS^™ and LOGIC LEVEL (3 Quadrants)
Test Conditions
Quadrant
Value
TW
SW CW
IGT (1)
I - II - III MAX.
5
10
35
VD = 12 V RL = 30 W
VGT
I - II - III MAX.
1.3
VGD
IH (2)
VD = VDRM RL = 3.3 kW
Tj = 125°C
I - II - III
MIN.
IT = 100 mA
MAX.
10
0.2
15
35
IL
IG = 1.2 IGT
I - III
MAX.
10
25
50
II
15
30
60
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125°C
MIN.
20
40
500
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C
MIN.
3.5
6.5
-
1.0
2.9
-
Without snubber
Tj = 125°C
-
-
6.5
BW
50
50
70
80
1000
-
-
12
BTA12
Unit
mA
V
V
mA
mA
V/µs
A/ms
Symbol
n STANDARD (4 Quadrants)
Test Conditions
Quadrant
IG (1)
VGT
VGD
IH (2)
IL
VD = 12 V RL = 30 W
VD = VDRM RL = 3.3 kW Tj = 125°C
IT = 500 mA
IG = 1.2 IGT
dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125°C
I - II - III
IV
ALL
ALL
I - III - IV
II
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
Value
C
B
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5
10
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value
VT (2) ITM = 5.5 A
tp = 380 µs
Vto (2) Threshold voltage
Rd (2) Dynamic resistance
IDRM
VDRM = VRRM
IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
MAX.
MAX.
MAX.
MAX.
1.55
0.85
35
5
1
Value
2.3
60
Unit
mA
V
V
mA
mA
V/µs
V/µs
Unit
V
V
mW
µA
mA
Unit
°C/W
°C/W
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