BFR93A Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

BFR93A/BFR93AR
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
Characteristic
Symbol Min
Typ
DC CHARACTERISTICS
Collector – Base Cutoff Current,
I_E= 0mA, V_CB=10V
Emitter – Base Cutoff Current,
I_C= 0mA, V_EB= 2V
Collector – Emitter Breakdown Voltage,
I_C= 1mA, I_B= 0mA
Collector – Emitter Saturation Voltage,
I_C=50mA, I_B= 5mA
DC Current Gain,
I_E=30mA, V_CB= 5V
AC CHARACTERISTICS
Transition Frequency,
I_C=30mA, V_CB= 5V, f=300MHz
Collector-Base Capacitance,
I_E= 0mA, V_CB=10V, f= 1MHz
Noise Figure,
I_E= 5mA, V_CE= 8V, f=800MHz, Z_S=50Ω
Power Gain,
I_E=30mA, V_CE= 8V, f=800MHz, Z_S=50Ω, Z_L=Z_Lopt
I_CBO
I_EBO
V_(BR)CEO
V_CE(sat)
h_FE
–
–
12
–
40
–
–
–
100
90
f_T
4.6
6.0
C_cb
–
0.45
N_F
–
1.6
G_PS
12.5 14.0
Max
100
10.0
–
400
150
–
0.9
–
–
TIPICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
250
0,8
Unit
nA
µA
V
mV
–
GHz
pF
dB
dB
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0,6
0,4
0,2
V_CB=10V
f=1MHZ
0
0
5
10
15
20
VCB - Collector Base Voltage (V)
Figure 2. Collector – Base Capacitance vs.
Collector – Base Voltage
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