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BFR91A Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor | |||
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BFR91A
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
DC CHARACTERISTICS
Collector Cutoff Current,
IE= 0mA, VCB=10V
Emitter Cutoff Current,
IC= 0mA, VEB= 2V
Collector â Emitter Breakdown Voltage,
IC= 1mA, IB= 0mA
DC Current Gain,
IE=30mA, VCB= 5V
Collector â Emitter Saturation Voltage,
IC= 1mA, IB= 0mA
AC CHARACTERISTICS
Transition Frequency,
IC=30mA, VCB= 5V, f=300MHz
Collector-Base Capacitance,
IE= 0mA, VCB=10V, f= 1MHz
Noise Figure,
IE= 5mA, VCE= 8V, f=800MHz
Power Gain,
IE=30mA, VCE= 8V, f=800MHz
hFE CLASSIFICATION
Class
K
ICBO
â
â 100
IEBO
â
â
10
V(BR)CEO
12
â
â
hFE
50
120
300
VCE(sat)
â 100
400
fT
4.5
6.0
â
Ccb
â
0.4
0.9
NF
â
1.6
2.0
GPS
12.0 13.0
â
nA
µA
V
â
mV
GHz
pF
dB
dB
H
F
E
hFE
50 to 300
50 to 100
80 to 160
125 to 250
TIPICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
350
1
300
0,8
250
0,6
200
150
0,4
100
VCB=10V
0,2
f=1MHZ
50
0
0
20 40 60 80 100 120 140 160
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
0
5
10
15
20
VCB - Collector Base Voltage (V)
Figure 2. Collector â Base Capacitance vs.
Collector â Base Voltage
Ph./Fax: +7â816â2231736
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta
2
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© July 2000 Rev 1
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