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| BDY57 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA | |||
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BDY57 â BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
IC=100 mA, IB=0
BDY57
BDY58
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=10 A, IB=1.0 A
BDY57
BDY58
Min Typ Mx Unit
80 - -
125 - -
V
- 0.5 1.4 V
V(BR)CBO
Collector-Base Breakdown
Voltage (*)
IC=5.0mA, IE=0
BDY57
120 - -
V
BDY58
160 - -
V(BR)EBO
Emitter-Base Breakdown
Voltage (*)
IE=5.0 A, IC=0
BDY57
BDY58
ICBO
ICER
IEBO
h21E
fT
td + tr
Collector-Base Cutoff
Current
VCB=120 V
IE=0 V
BDY57
BDY58
Collector-Emitter Cutoff
Current
VCE=80 V
RBE=10 â¦
TCASE=100°C
BDY57
BDY58
Emitter-Base Cutoff Current
VEB=10 V
IC=0 V
BDY57
BDY58
Static Forward Current
transfer ratio (*)
VCE=4 V, IC=10 A
VCE=4 V, IC=20 A
VCE=4 V, IC=10 A, TCASE=-
30°C
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
Transition Frequency
VCE=15 V, IC=1.0 A, f=10
MHz
BDY57
BDY58
Turn-on time
IC=15 A, IB=1.5 A
BDY57
BDY58
- 0.5 1.4 V
1.0
- 0.5
mA
0.5
- - 10 mA
-
-
0.25 0.5
mA
20 - 60
- 15 -
V
10 - -
10 30 - MHz
- 0.25 1 µs
COMSET SEMICONDUCTORS
2/3
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