BDY23 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS, DIFFUSED MESA

BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V_CEO(BR)
Collector-Emitter
Breakdown Voltage (*)
IC=50 mA, IB=0
V_(BR)CBO
I_CEO
I_EBO
Collector-Base Breakdown
Voltage (*)
IC=3 mA
Collector-Emitter Cutoff
Current
VCE=60 V
VCE=90 V
VCE=140 V
Emitter-Base Cutoff Current VEB=10 V
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23
BDY24
BDY25
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
VCE=60 V
VBE=0 V
BDY23, 180T2
Collector-Emitter Cutoff
I_CES
Current
VCE=100 V
VBE=0 V
BDY24, 181T2
V_CE(SAT)
VCE=180 V
VBE=0 V
BDY25, 182T2
Collector-Emitter saturation
Voltage (*)
IC=2.0 A, IB=0.25 A
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Min Typ Mx Unit
60 - -
90 - -
V
140 - -
60 - -
100 -
-
V
200 -
-
--
- - 1.0 mA
--
- - 1.0 mA
- - 0.5
- - 1.0 mA
- - 1.0
- -1
- - 0.6 V
- - 0.6
COMSET SEMICONDUCTORS
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