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| BDX20 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTORS EPITAXIAL BASE | |||
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BDX20
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO(SUS)
VCEX
ICEX
ICBO
Collector-Emitter Sustaining
Voltage (*)
IC=-200 mA, IB=0
-140 - -
Collector-Emitter
Breakdown Voltage (*)
IC=-100 mA, VBE=1.5 V
-160 - -
Collector Cutoff Current
Collector-Base Cutoff
Current
VCE=-140 V, VBE=1.5 V
-
VCE=-140 V, VBE=1.5 V, TCASE=150°C -
VCB=-140 V, IE=0
-
- -1.0
- -10
- -1.0
IEBO
Emitter-Base Cutoff Current VBE=-7.0 V, IC=0
h21E
VCE(SAT)
VBE
Static Forward Current
Transfer Ratio (*)
Collector-Emitter Saturation
Voltage (*)
Base-Emitter Voltage (*)
IC=-3.0 A, VCE=-4.0 V
IC=10 A, VCE=-4.0 V
IC=-3.0 A, IB=-0.3 A
IC=-10 A, IB=-2 A
IC=-3.0 Adc, VCE=-4.0 V
IC=-10 A, VCE=-4.0 V
fT
Transition Frequency
VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz
In accordance with JEDEC Registration Data
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
- - -5.0
20 - 70
- 10 -
- - -1.0
- - -5.0
- -1.7 -
- -5.7 -
4- -
V
V
mA
mA
mA
-
V
V
MHz
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Pin 2 :
Case :
Base
Collector
Emitter
COMSET SEMICONDUCTORS
2/2
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