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| BDX18 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR EPITAXIAL BASE | |||
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BDX18 â BDX18N
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO(SUS)
VCEX(SUS)
VCER(SUS)
ICEX
IEBO
VBE
VCE(SAT)
fT
Collector-Emitter
Breakdown Voltage (*)
IC=200 mA, IB=0
BDX18
BDX18N
Collector-Emitter
Breakdown Voltage (*)
IC=-100 mA, VBE=1.5 V
BDX18
BDX18N
Collector-Emitter
Breakdown Voltage (*)
IC=-200 mA, RBE=100 â¦
Collector-Emitter Cutoff
Current
VCE=-90 V, VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VCE=-70 V, VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
Emitter-Base Cutoff Current VEB=-7 V
Base-Emitter Voltage (*)
IC=-4.0 A, VCE=-4.0V
Collector-Emitter Saturation
Voltage
IC=-4.0 A, IB=-0.4V
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Transition Frequency
IC =-1A, VCE=-10 V, f=1
MHz
BDX18
BDX18N
-60
-60
-
-
V
-90 - -
V
-70 - -
-70 - -
V
-65 - -
- - -5
-10
-
- -5 mA
- - -10
- - -5 mA
- - -1.8 V
- - -1.1 V
- 4 - MHz
COMSET SEMICONDUCTORS
2/3
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