AO3419 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO3419, AO3419L
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_D=-250µA, V_GS=0V
V_DS=-16V, V_GS=0V
I_GSS
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V_DS=0V, V_GS=±10V
V_DS=0V, V_GS=±12V
V_DS=V_GS I_D=-250µA
V_GS=-4.5V, V_DS=-5V
V_GS=-10V, I_D=-3.5A
R_DS(ON)
g_FS
V_SD
I_S
Static Drain-Source On-Resistance
V_GS=-4.5V, I_D=-3A
V_GS=-2.5V, I_D=-1A
Forward Transconductance
V_DS=-5V, I_D=-3.5A
Diode Forward Voltage
I_S=-1A,V_GS=0V
Maximum Body-Diode Continuous Current
-20
T_J=55°C
-0.7
-15
T_J=125°C
-0.65
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-10V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Total Gate Charge
Q_gs
Gate Source Charge
V_GS=-4.5V, V_DS=-10V, I_D=-3.5A
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
Turn-On Rise Time
V_GS=-10V, V_DS=-10V, R_L=2.8Ω,
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
t_f
Turn-Off Fall Time
t_rr
Body Diode Reverse Recovery Time ^IF^{=-3.5A, dI/dt=100A/µs}
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=-3.5A, dI/dt=100A/µs}
Typ
-0.9
59
83
76
111
6.8
-0.81
512
77
62
9.2
5.5
0.8
1.9
5
6.7
28
13.5
9.8
2.7
Max
-0.5
-2.5
±1
±10
-1.4
75
105
95
145
-0.95
-2
620
13
6.6
12
Units
V
µΑ
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R _θJA is measured with the device mounted on 1in ² FR-4 board with 2oz. Copper, in a still air environment with T _A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R _θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.