84-1LMISR4 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE

84-1LMISR4
PHYSIOCHEMICAL PROPERTIES
- Post Cure
Glass Transition Temperature
ABLEBOND 84-1LMISR4
Test Description
120ºC
TMA penetration mode
Coefficient of Thermal Expansion
Below Tg
Above Tg
40 ppm/ºC
150 ppm/ºC
TMA expansion mode
Test
Method
ATM-0058
ATM-0055
Dynamic Tensile Modulus
Moisture Absorption @ Saturation
THERMAL/ELECTRICAL
PROPERTIES - Post Cure
Thermal Conductivity @ 121ºC
Volume Resistivity
MECHANICAL PROPERTIES -
Post Cure
Die Shear Strength @ 25ºC
Die Shear Strength (kg_f/die) vs.
Temperature
@ -65ºC
@ 25ºC
@ 150ºC
@ 250ºC
4400 MPa (640,000 psi)
3900 MPa (570,000 psi)
2000 MPa (290,000 psi)
300 MPa (44,000 psi)
Dynamic
mechanical
thermal analysis
using < 0.5mm
thick sample
0.6%
Dynamic vapor sorption after 85ºC/
85% RH exposure
ABLEBOND 84-1LMISR4
Test Description
2.5 W/mK
0.0001 ohm-cm
C-MATIC conductance tester
4-point probe
ABLEBOND 84-1LMISR4
Test Description
19 kg_f/die
@25ºC
21
11
27
@200ºC
2.9
2.6
2.4
2 x 2mm (80 x 80 mil) Si die on
Ag/Cu leadframe
@250ºC
1.7
1.4
2.0
Substrate
Ag/Cu LF
Bare Cu LF
Pd/Ni/Cu LF
3 x 3 mm
(120 x 120
mil) Si die
ATM-0112
ATM-0093
Test
Method
ATM-0017
ATM-0020
Test
Method
ATM-0052
ATM-0052
Die Shear Strength (kg_f/die) after
85ºC/85% RH exposure for 168
hours
@25ºC
12
10
23
@200ºC
1.8
2.5
1.8
Substrate
Ag/Cu LF
Bare Cu LF
Pd/Ni/Cu LF
3 x 3 mm
(120 x 120 mil)
Si die
ATM-0052
Chip Warpage (µm) @ 25ºC vs.
Chip Size
Chip Size
7.6 mm (300 x 300 mil)
10.2 x 10.2 mm (400 x 400 mil)
12.7 x 12.7 mm (500 x 500 mil)
Warpage
19 µm
32 µm
51 µm
0.38mm (5 mil)
thick Si die on
0.2mm thick
Ag/Cu LF
ATM-0059
Chip Warpage (µm) vs. Post Cure
Thermal Process⁽²⁾
Substrate
Ag/Cu LF Bare Cu LF
Post Cure
+ Wirebond
(1 min @ 250ºC)
+ Post Mold Bake
(4 hrs @ 175ºC)
20 µm
29 µm
28 µm
22 µm
30 µm
28 µm
3 x 3 mm
(120 x 120 mil)
Si die
ATM-0059
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