5STP03X6500 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – Phase Control Thyristor

On-state
I_TAVM Max. average on-state current
I_TRMS Max. RMS on-state current
I_TSM Max. peak non-repetitive
surge current
I²t
Limiting load integral
V_T On-state voltage
V_T0 Threshold voltage
r_T
Slope resistance
I_H
Holding current
I_L
Latching current
5STP 03X6500
350 A
550 A
Half sine wave, T_C = 70°C
4500 A
4850 A
tp =
tp =
10 ms T_j = 125°C
8.3 ms After surge:
101 kA²s tp =
98 kA²s tp =
10 ms
8.3 ms
V_D = V_R = 0V
3.50 V I_T =
1000 A
1.20 V I_T =
2.300 mΩ
300 - 900 A
T_j = 125°C
30-80 mA
15-60 mA
80-500 mA
50-200 mA
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
Switching
di/dt_crit Critical rate of rise of on-state
current
t_d
Delay time
≤
t_q
Turn-off time
≤
Q_rr Recovery charge
min
max
100 A/µs
200 A/µs
3.0 µs
700 µs
900 µAs
Cont. f = 50 Hz V_D ≤ 0.67⋅V_DRM , T_j = 125°C
60 sec.
f = 50Hz
I_TRM = 1000 A
I_FG = 2 A, t_r = 0.5 µs
V_D = 0.4⋅V_DRM IFG = 2 A, tr = 0.5 µs
V_D ≤ 0.67⋅V_DRM ITRM = 1000 A, Tj = 125°C
dv_D/dt = 20V/µs V_R > 200 V, di_T/dt = 1 A/µs
2000 µAs
Triggering
V_GT
I_GT
V_GD
I_GD
V_FGM
I_FGM
V_RGM
P_G
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Gate power loss
2.6 V
400 mA
0.3 V
10 mA
12 V
10 A
10 V
3W
T_j = 25°
T_j = 25°
V_D =0.4 x V_DRM
V_D = 0.4 x V_DRM
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01
page 2 of 5