3MBI150UC-120 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – IGBT Module U-Series 1200V / 150A 3 in one-package

3MBI150UC-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
400
VGE=20V
15V
12V
300
200
10V
100
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
400
T j=25°C
300
T j=125°C
200
100
0
0
1
2
3
4
Collector-Emitter voltage : VCE [V]
100.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
Cies
10.0
Cres
1.0
Coes
0.1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
400
VGE=20V 15V
12V
300
200
100
0
0
10V
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Ic=300A
Ic=150A
Ic= 75A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
VGE
0
0
VCE
200
400
600
800
Gate charge : Qg [ nC ]