1MBI600U-120 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – IGBT MODULE U-SERIES

1MBI600U-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1400
1200
VGE=20V 15V 12V
1000
800
10V
600
400
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1400
1200
Tj=25°C
1000
800
Tj=125°C
600
400
200
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.0
Cies
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
1400
1200
VGE=20V 15V
12V
1000
800
10V
600
400
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Ic=1200A
Ic= 600A
Ic= 300A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=600A, Tj= 25°C
VGE
10.0
1.0
0
Cres
Coes
10
20
30
Collector-Emitter voltage : VCE [V]
0
0
VCE
500 1000 1500 2000 2500 3000 3500
Gate charge : Qg [ nC ]