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| ZUMT2222A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT323 NPN SILICON PLANAR SWITCHING TRANSISTOR | |||
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SOT323 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 1 â NOVEMBER 1998
FEATURES
*
Fast switching
PARTMARKING DETAIL
â T16
COMPLEMENTARY TYPE â ZUMT2907A
ZUMT2222A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
75
V
IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
40
V
IC=10mA, IB=0
Emitter-Base Breakdown V(BR)EBO 6
Voltage
V
IE=10µA, IC=0
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Cut-Off ICEX
Current
10
nA
VCB=60V, IE=0
10
µA
VCB=60V, IE=0, Tamb=150°C
10
nA
VEB=3V, IC=0
10
nA
VCE=60V, VEB(off)=3V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
V
1.0
V
Base-Emitter
Saturation Voltage
VBE(sat)
0.6
1.2
V
2.0
V
Static Forward Current
hFE
Transfer Ratio
35
50
75
35
100
300
50
40
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IC=0.1mA, VCE=10V*
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=10mA, VCE=10V, Tamb=-55°C
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
IC=500mA, VCE=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
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