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| ZTX556 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS | |||
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PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 1 Â JULY 94
FEATURES
* 300 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
ZTX556
ZTX557
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
ZTX556
ZTX557
-200
-300
-200
-300
-5
-1
-0.5
1.0
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX556
ZTX557 UNIT CONDITIONS.
MIN. MAX MIN. MAX
Collector-Base
V(BR)CBO -200
Breakdown Voltage
-300
V
IC=-100µA
Collector-Emitter
V(BR)CEO -200
Breakdown Voltage
-300
V
IC=-10mA*
Emitter-Base
V(BR)EBO -5
-5
V
IE=-100µA
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
-0.1
µA VCB=-160V
-0.1 µA VCB=-200V
-0.1
-0.1 µA VEB=-4V
Collector-Emitter
VCE(sat)
-0.3
-0.3 V
IC=-50mA, IB=-5mA*
Saturation Voltage
Base-Emitter
VBE(sat)
-1
Saturation Voltage
-1
V
IC=-50mA, IB=-5mA*
Base-Emitter
VBE(on)
-1
Turn-on Voltage
-1
V
IC=-50mA, VCE=-10V*
Static Forward
hFE
Current Transfer
Ratio
50
50
50 300 50 300
IC=-10mA, VCE=-10V*
IC=-50mA, VCE=-10V*
Transition
fT
75
75
MHz IC=-50mA, VCE=-10V
Frequency
f=100MHz
3-200
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