ZTX3866 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR

NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ISSUE 2 – MARCH 94
FEATURES
* 1W P_OUT at 175 MHz, 28V, 18dB typical
* 1W P_OUT at 400 MHz, 28V, 9.7dB typical
* High P_tot
* High efficiency
ZTX3866
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_CER
V_EBO
I_CM
P_tot
T_j:T_stg
E-Line
TO92 Compatible
VALUE
55
30
55
3.5
400
350
-55 to +175
UNIT
V
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V_(BR)CBO
55
Breakdown Voltage
V
I_C=100µA, I_E=0
Collector-Emitter
Breakdown Voltage
V_(BR)CEO(sus) 30
V
I_C=5mA, I_B=0
Emitter-Base
V_(BR)EBO
3.5
Breakdown Voltage
V
I_E=100µA, I_E=0
Collector Emitter
I_CEO
Cut-Off Current
20
µA
V_CB=28V, I_B=0
Collector-Emitter
Saturation Voltage
V_CE(sat)
1.0 V
I_C=100mA, I_B=20mA
Collector-Emitter
Sustaining Voltage
V_(BR)CER(sus) 55
V
IC=5mA, R_BE=10Ω
Static Forward
h_FE
15
Current Transfer
200
I_C=50mA, V_CE=5V
Transitional
f_T
Frequency
400 700
MHz I_C=25mA, V_CE=15V
f=100MHz
Output Capacitance
R.F. Power Output
Efficiency
C_obo
P_OUT
η
3.0
700 900
50
70
pF
mW
%
V_CB=30V, I_E=0, f=1MHz
V_CC=28V, P_IN=100mW
f=400MHz
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