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| ZTX314 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR | |||
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NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTOR
ISSUE 2 Â MARCH 94
FEATURES
* 15 Volt VCEO
* fT=500 MHz
ZTX314
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IB
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
40
15
5
100
500
300
-55 to +175
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 40
Voltage
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(SUS) 15
V
IC=10mA, IB=0*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE=10µA, IC=0
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
ICBO
VCE(SAT)
VBE(SAT)
0.7
hFE
40
40
30
20
fT
500
200
nA
30
µA
VCB=20V, IE=0
VCB=20V, IE=0, Tamb=100°C
0.2
V
0.5
V
IC=10mA, IB=1mA*
IC=100mA, IB=10mA*
0.85 V
1.6
IC=10mA, IB=1mA*
IC=100mA, IB=10mA*
120
IC=10mA, VCE=1V*
120
IC=10mA, VCE=0.35V*
IC=30mA, VCE=1V*
IC=100mA, VCE=1V*
MHz
IC=10mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
4
pF
VCB=5V, f=1MHz
Storage Time
tstg
13
ns
IC=IB1=IB2=10mA
Turn-on Time
ton
12
ns
IC=10mA, IB1=3mA
Turn-off Time
toff
18
ns
IC=10mA, IB1=3mA,
IB2=1.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-158
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