ZCN0545A Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT

N-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
ISSUE 2 – MAY 94
ZCN0545A
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
* Extremely low on state voltage
* No need to derate for higher temperatures
* Excellent temperature immunity
* High input impedance
* Reverse blocking characteristic which is
Independent of gate bias
* Low input capacitance
* Characterised for logic level drive
APPLICATIONS
* Fluorescent lamp driver
* Automotive load drivers
* High voltage DC-DC converters
* Darlington replacement
* Telecoms hook switch and earth recall switch
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS (at T_amb=25°C unless otherwise stated)
PARAMETER
SYMBOL
VALUE
UNIT
Forward Drain-Source Voltage
V_DS
450
V
Reverse Drain Source Voltage
V_SD
30
V
Continuous Drain Current
I_D
0.32
A
Practical Continuous Drain Current*
I_DP
0.37
A
Pulsed Drain Current
@ T_amb=25°C
@ T_amb=125°C
I_DMR
I_DM
2
A
1
A
Gate-Source Voltage
V_GS
±20
V
Power Dissipation at T_amb=25°C
P_tot
0.6
W
Practical Power Dissipation*
P_DP
0.8
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +125
°C
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
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