XP133A1235SR Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Power MOS FET

91"43
1PXFS
.04
'&5
˗N-Channel Power MOS FET
˗DMOS Structure
˗Low On-State Resistance : 0.035Ω (max)
˗Ultra High-Speed Switching
˗SOP - 8 Package
˗Two FET Devices built-in
˙Applications
˔
Notebook PCs
˔
Cellular and portable phones
˔
On - board power supplies
˔
Li - ion battery systems
˙General Description
The XP133A1235SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
˙Features
Low on-state resistance : Rds (on) = 0.035Ω ( Vgs = 4.5V )
Rds (on) = 0.048Ω ( Vgs = 2.5V )
Ultra high-speed switching
Operational Voltage : 2.5V
High density mounting : SOP - 8
˙Pin Configuration
S1 1
G1 2
S2 3
G2 ⁴
SOP - 8 Top View
8 ^D1
7 D1
6 _D2
5 D2
˙Equivalent Circuit
1
8
2
7
3
6
4
5
N - Channel MOS FET
( 2 FET devices built-in )
˙Pin Assignment
PIN NUMBER PIN NAME
FUNCTION
u
1
S1
2
G1
Source
Gate
3
S2
Source
4
G2
5-6
D2
7-8
D1
Gate
Drain
Drain
˙Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
+ 12
6
20
6
2
150
- 55 to 150
( note ) : When implemented on a glass epoxy PCB
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C